2012/06/20 ver.3 page 1 sp n7002k n-channel enhancement mode mosfet description applications the SPN7002K is the n- channel enhancement mode field effect transistors are produced using high cell density dmos technology. these products have been designed to minimize on- state resistance while provide rugged, reliable, and f ast switching performance. they can be used in most applications requiring up to 640ma dc and can deliver pulsed currents up to 950ma. these products are particularly suited for low voltage, low current applications such as small servo motor control, power mosfet gate drivers, and other switching applications. drivers: relays, solenoids, lamps, hammers, display, memories, transistors, etc. high saturation current capability. direct logic-level interface: ttl/cmos battery operated systems solid-state relays features pin configuration(sot-23) part marking 60v/0.50a , r ds(on) = 2.0 ? @v gs =10v 60v/0.20a , r ds(on) = 4.0 ? @v gs =4.5v super high density cell design for extremely low r ds (on) exceptional on-resistance and maximum dc current capability sot-23 package design
2012/06/20 ver.3 page 2 sp n7002k n-channel enhancement mode mosfet pin description pin symbol description 1 g gate 2 s source 3 d drain ordering information part number package part marking SPN7002Ks23rgb sot-23 nkxx SPN7002Ks23rgb : tape reel ; pb C free ; halogen C free absoulte maximum ratings (t a =25 unless otherwise noted) parameter symbol typical unit drain-source voltage v dss 60 v gate Csource voltage - continuous v gss 20 v continuous drain current(t j =150 ) t a =25 i d 0.3 a pulsed drain current ( * ** * ) i dm 0.8 a power dissipation t a =25 p d 0.35 w operating junction temperature t j -55 ~ 150 storage temperature range t stg -55 ~ 150 thermal resistance-junction to ambient r ja 350 /w ( * ** * ) pulse width limited by safe operating area
2012/06/20 ver.3 page 3 sp n7002k n-channel enhancement mode mosfet electrical characteristics (t a =25 unless otherwise noted ) parameter symbol conditions min. typ max. unit static drain-source breakdown voltage v (br)dss v gs =0v,i d =250ua 60 gate threshold voltage v gs(th) v ds =v gs ,i d =250ua 1.0 1.7 2.5 v gate leakage current i gss v ds =0v,v gs =20v 30 ua v ds =60v,v gs =0v t j =25 1 zero gate voltage drain current i dss v ds =48v,v gs =0v t j =70 100 ua v gs =10v,i d =0.50a 2.0 3.0 drain-source on-resistance r ds(on) v gs = 4.5v,i d =0.20a 3.0 3.5 ? forward transconductance gfs(1) v ds = 10 v, i d = 0.6 a 0.08 s diode forward voltage v sd (1) v gs = 0 v, i s = 0.5a 1.3 v dynamic total gate charge q g 0.6 0.8 gate-source charge q gs 0.2 gate-drain charge q gd v dd = 50 v, i d = 0.6 a, v gs = 4.5 v 0.2 nc input capacitance c iss 30 50 output capacitance c oss 7 reverse transfer capacitance c rss v ds = 25 v, f = 1 mhz, v gs = 0 4 pf t d(on) 2 turn-on time t r 15 t d(off) 8 turn-off time t f v dd = 30 v, i d = 0.6 a r g = 3.3 ? v gs = 10.0 v r d = 52 ? 11 ns (1) pulsed: pulse duration Q 300 s, duty cycle Q 2 %. (2) pulse width limited by safe operating area.
2012/06/20 ver.3 page 4 sp n7002k n-channel enhancement mode mosfet typical characteristics
2012/06/20 ver.3 page 5 sp n7002k n-channel enhancement mode mosfet typical characteristics
2012/06/20 ver.3 page 6 sp n7002k n-channel enhancement mode mosfet typical characteristics
2012/06/20 ver.3 page 7 sp n7002k n-channel enhancement mode mosfet sot-23 package outline min max min max a 0.820 1.200 0.0323 0.0430 a1 0.000 0.100 0.0000 0.0040 a2 0.820 1.100 0.0323 0.0390 b 0.300 0.500 0.0120 0.0200 c 0.080 0.150 0.0030 0.0060 d 2.800 3.000 0.1100 0.1180 e 1.200 1.400 0.0470 0.0550 e1 2.200 2.550 0.0866 0.1000 e e1 1.800 2.000 0.0710 0.0790 l l1 0.200 0.500 0.0079 0.0200 0? 8? 0? 8? symbol dimensions in inches dimensions in millimeters 0.95 typ 0.529 ref 0.037 typ 0.0208 ref
2012/06/20 ver.3 page 8 sp n7002k n-channel enhancement mode mosfet information provided is alleged to be exact and con sistent. sync power corporation presumes no respon sibility for the penalties of use of such information or for any vio lation of patents or other rights of third parties which may result from its use. no license is granted by allegation or otherwise un der any patent or patent rights of sync power corpo ration. conditions mentioned in this publication are subject to change without notice. this publication surpasses and re places all information previously supplied. sync power corporation produc ts are not authorized for use as critical component s in life support devices or systems without express written approval of sync power corporation. ?the sync power logo is a registered trademark of s ync power corporation ?2004 sync power corporation C printed in taiwan C all rights reserved sync power corporation 7f-2, no.3-1, park street nankang district (nksp), taipei, taiwan, 115, r.o.c phone: 886-2-2655-8178 fax: 886-2-2655-8468 ?http://www.syncpower.com
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